Ajoint research between POSTECH (Pohang University of Science and Technology) and Max Planck Institute of Microstructure Physics, Halle, has produced an advanced technology applicable to the development of the permanent memory, FeRAM, which can save 176 billion bits per square inch (published in Nature Nanotechnology, vol. 3, page 402). FeRAM has attracted many researchers’ interest because of its excellent characters such as nonvolatility, fast read and write, and high reliability. However, limitation in realizing large scale integration of ferroelectrics on a single chip has hindered t..
Improvements in performance and reductions in cost of silicon-based nonvolatile memories, such as flash random access memory (flash-RAM), have rendered floppy discs and many other forms of portable storage obsolete. But for many uses that require data to be written only once, such as archiving and security applications, their cost effectiveness is limited. So-called write-onceread- many (WORM) memories made from low-cost polymer materials could provide a solution. The devices, developed by Professors Moonhor Ree, Ohyun Kim, Su-Moon Park and their research teams, are based on hyperbranched copp..